Title of article
Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques
Author/Authors
Stein von Kamienski، نويسنده , , E.G. Stein and Leonhard، نويسنده , , C. and Portheine، نويسنده , , F. and Gِlz، نويسنده , , A. and Kurz، نويسنده , , H.، نويسنده ,
Pages
4
From page
263
To page
266
Abstract
A large part of interface states in thermal oxides on n- and p-type 6H-SiC can be passivated by introducing hydrogen to the fabrication process. The oxide trap densities of passivated and unpassivated samples are investigated by charge injection experiments using Fowler Nordheim and photo-injection techniques.
Keywords
Charge injection techniques , Gate oxides , Metal oxide semiconductor
Journal title
Astroparticle Physics
Record number
2065187
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