Author/Authors :
Stein von Kamienski، نويسنده , , E.G. Stein and Leonhard، نويسنده , , C. and Portheine، نويسنده , , F. and Gِlz، نويسنده , , A. and Kurz، نويسنده , , H.، نويسنده ,
Abstract :
A large part of interface states in thermal oxides on n- and p-type 6H-SiC can be passivated by introducing hydrogen to the fabrication process. The oxide trap densities of passivated and unpassivated samples are investigated by charge injection experiments using Fowler Nordheim and photo-injection techniques.
