A study of the contact potential difference in p-n 6H-SiC structures grown by various techniques

The aim of the present work is to compare experimental values of the diffusion potentials (Ud) found from capacity-voltage characteristics of 6H-SiC diodes with calculated values obtained using known parameters from the literature or determined by other experimental techniques. Value of Ud of 6H-SiC p-n structures produced by different technological methods have been investigated in the temperature range 300–800 K. It was shown that the dependence Ud = F(T) is similar to the one found in other semiconductor materials. It is shown that the calculated value for Ud for all types of p-n structures has better agreement with experiments when using for the forbidden gap the value 2.86 eV, instead of the usual value equal to 3.02 eV.