Title of article :
Temperature gradient controlled SiC crystal growth
Author/Authors :
Anikin، نويسنده , , M. and Madar?sz، نويسنده , , R.، نويسنده ,
Abstract :
6H-SiC ingots, 1 in, in diameter have been grown by the modified Lely method with ‘in situ’ sublimation etching. Nucleation was controlled by the temperature gradient. Pinholes density was in the range of 100–200 cm−2. It is proposed that the developed method allows to realise step flow growth to decrease pinhole density.
Keywords :
sublimation , characterization , ‘In situ’ etching , 6H-SiC crystal growth
Journal title :
Astroparticle Physics
