Growth and investigation of epitaxial 6H-SiC layers obtained by CVD on Lely-grown substrates

The aim of the present work was: (1) to grow SiC epilayers on Lely-grown 6H-SiC substrates (characterized at present by the highest crystalline perfection) and (2) to investigate the quality of the epilayers. The growth of the SiC epitaxial layers was performed in the system SiH4-CH4-H2. It was found that the crystal perfection of the on-grown epilayers is not much less than that of the Lely substrate. To study the electrical properties of the obtained epitaxial layers, Schottky barriers were formed on their surfaces with the use of various metals. In layers grown on sublimation- and hydrogen-etched substrates, the concentration Nd-Na was ~ 6 × 1016 − 3 × 1017 cm−3 The thickness of the intermediate region between substrates and epilayers was smaller than 0.01 μm.