Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals

Different macroscopic models such as thermodynamics, heat transfer and mass transport have been applied to the simulation of the growth of single SiC crystals prepared according to the so-called ‘modified Lely method’. Thermodynamic modelling has been used to determine the most important reactive gaseous and solid species present under equilibrium conditions. Heat transfer modelling (including induction heating, radiation with multireflection, convection and conduction) has been performed to calculate the actual temperatures inside the reactor. Different temperature fields have been obtained depending on the level of complexity of the thermal modelling. Finally, mass transport modelling provided the chemical fields of the process and calculated deposition rates which were found to be close to the experimental ones. It appears that the solid SiC surface shape after growth depends on the temperature gradient existing along the seed.