Title of article :
Silicon carbide on insulator formation by the Smart-Cut® process
Author/Authors :
Di Cioccio، نويسنده , , L. and Letertre، نويسنده , , F. and Le Tiec، نويسنده , , Y. and Papon، نويسنده , , A.M. and Jaussaud، نويسنده , , C. and Bruel، نويسنده , , M.، نويسنده ,
Pages :
8
From page :
349
To page :
356
Abstract :
For the first time silicon carbide on insulator structures (SiCOI) were achieved by the Smart-Cut® process. These structures were formed on polycrystalline SiC and on silicon substrates. The technological solutions used and the structures obtained are presented in this paper.
Keywords :
direct bonding , silicon carbide , Insulator structures , Wafer bonding
Journal title :
Astroparticle Physics
Record number :
2065210
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2065210
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