Title of article
Silicon carbide on insulator formation by the Smart-Cut® process
Author/Authors
Di Cioccio، نويسنده , , L. and Letertre، نويسنده , , F. and Le Tiec، نويسنده , , Y. and Papon، نويسنده , , A.M. and Jaussaud، نويسنده , , C. and Bruel، نويسنده , , M.، نويسنده ,
Pages
8
From page
349
To page
356
Abstract
For the first time silicon carbide on insulator structures (SiCOI) were achieved by the Smart-Cut® process. These structures were formed on polycrystalline SiC and on silicon substrates. The technological solutions used and the structures obtained are presented in this paper.
Keywords
direct bonding , silicon carbide , Insulator structures , Wafer bonding
Journal title
Astroparticle Physics
Record number
2065210
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