Author/Authors :
Ballandovich، نويسنده , , V.S. and Bogachev، نويسنده , , S.V. and Ilʹyn، نويسنده , , V.A. and Korlyakov، نويسنده , , A.V. and Kostromin، نويسنده , , S.V. and Luchinin، نويسنده , , V.V. and Petrov، نويسنده , , A.A.، نويسنده ,
Abstract :
A series of temperature, pressure, as well as gas or liquid flow sensors, working under extreme service conditions like high temperature, hostile environments, radiation has been carried out on the basis of a unified silicon carbide (SiC) technology. The different step include performing a low-temperature SiC epitaxy on an insulating substrate, performing a precise local dry etching using standard photoresist masks and achieving high-temperature contact fabrication. Details of these steps and corresponding applications are reviewed.
Keywords :
Pressure sensor , temperature sensor , SiC microtechnology , Electrical characterization , Gas and liquid flow sensor
