Title of article
Realization of silicon carbide sensors for measurements on gaseous working fluids
Author/Authors
Ballandovich، نويسنده , , V.S. and Bogachev، نويسنده , , S.V. and Ilʹyn، نويسنده , , V.A. and Korlyakov، نويسنده , , A.V. and Kostromin، نويسنده , , S.V. and Luchinin، نويسنده , , V.V. and Petrov، نويسنده , , A.A.، نويسنده ,
Pages
4
From page
383
To page
386
Abstract
A series of temperature, pressure, as well as gas or liquid flow sensors, working under extreme service conditions like high temperature, hostile environments, radiation has been carried out on the basis of a unified silicon carbide (SiC) technology. The different step include performing a low-temperature SiC epitaxy on an insulating substrate, performing a precise local dry etching using standard photoresist masks and achieving high-temperature contact fabrication. Details of these steps and corresponding applications are reviewed.
Keywords
Pressure sensor , temperature sensor , SiC microtechnology , Electrical characterization , Gas and liquid flow sensor
Journal title
Astroparticle Physics
Record number
2065217
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