Growth of GaN and AlN thin films by laser induced molecular beam epitaxy

Hexagonal GaN and AlN thin films were grown by laser induced molecular beam epitaxy using Al or Ga metal as target material and N2 as nitrogen source. The films were deposited on sapphire (0001) and SiC (0001) substrates. Epitaxial growth of GaN has been achieved at 730°C and 10−3 mbar N2 pressure. The AlN films were polycrystalline with predominant (0001) orientation.