Strong morphological dependence of luminescence efficiency and emission wavelength in hexagonal GaN crystallites directly imaged by scanning cathodoluminescence microscopy

The microstructure and morphology of hexagonal GaN crystallites grown on c-axis sapphire substrates by low pressure chemical vapor deposition is correlated with the luminescence efficiency and emission wavelength. Microscopic variation of local band gap monitored by the luminescence wavelength on the a- and c-planes of hexagonal GaN-crystallites are directly mapped by means of low temperature scanning cathodoluminescence (CL) and CL wavelength imaging (CLWI). Beside minor fluctuations from crystallite to crystallite, the a-planes show pronounced red shift of emission energy of more than 132 meV with respect to the luminescence from the c-planes. The c-plane itself shows additional inhomogeneity on a micron scale. Strongly red shifted luminescence (λ>400 nm) originates from the very center region correlated with a high dislocation density found in TEM. The CL intensity shows a reticulated structure over the c-plane visualizing the local dislocation network.