Title of article
Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD
Author/Authors
Olszyna، نويسنده , , A and Siwiec، نويسنده , , R. Dwilinski، نويسنده , , R and Kami?ska، نويسنده , , M. Kaminska and J. Konwerska-Hrabowska، نويسنده , , J and Soko?owska، نويسنده , , A، نويسنده ,
Pages
4
From page
170
To page
173
Abstract
In this work, results of photoluminescence and absorption measurements on pulse plasma assisted CVD layers of AlN are presented. We studied nanocrystalline layers grown on silicon substrate at a temperature of 300 K. The efficient photoluminescence of nanocrystalline AlN layers, obtained under non optimal conditions, i.e. relatively low excitation energy, seems to be promising for light emitting applications of this material.
Keywords
Nanocrystalline AlN , Pulse plasma assisted CVD , Photoluminesence
Journal title
Astroparticle Physics
Record number
2065281
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