Author/Authors :
Deguchi، نويسنده , , T and Azuhata، نويسنده , , T and Sota، نويسنده , , T and Chichibu، نويسنده , , S and Sarukura، نويسنده , , N and Ohtake، نويسنده , , H and Yamanaka، نويسنده , , T and Nakamura، نويسنده , , S، نويسنده ,
Abstract :
We present a nanosecond pump-and-probe optical study of wurtzite GaN under the excitation condition that the carrier-longitudinal optical phonon scattering does not contribute to the energy relaxation process. The delay time after which the isothermal condition is achieved is found to be ∼50 ns. This comes from both the phonon structure in GaN and the fact that the carrier cooling depends on excess kinetic energies of carriers.
Keywords :
Isothermal region , Phonon structure , Gallium nitride , Pump-and-probe method