Title of article
Spatially resolved investigations of the excitonic luminescence in GaN
Author/Authors
Hoffmann، نويسنده , , A and Christen، نويسنده , , J and Siegle، نويسنده , , H and Bertram، نويسنده , , F and Schmidt، نويسنده , , D and Eckey، نويسنده , , L and Thomsen، نويسنده , , C and Hiramatsu، نويسنده , , K، نويسنده ,
Pages
5
From page
192
To page
196
Abstract
We performed spatially-resolved investigations on thick GaN layers using cathodoluminescence and micro-Raman experiments. Our measurements reveal that the peak position of the excitonic transition lines strongly depends on the distance to the substrate interface. The luminescence is shifted continuously to lower energies with decreasing distance, however, a strong blue shift occurs directly at the interface. We correlate these effects with bandgap renormalization and band filling effects induced by a strong gradient of free-carrier concentration in addition to a strain gradient found by our Raman experiments.
Keywords
GaN , Spatially-resolved cathodoluminesence , Excitonic luminesence
Journal title
Astroparticle Physics
Record number
2065286
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