Author/Authors :
Deguchi، نويسنده , , T and Azuhata، نويسنده , , T and Sota، نويسنده , , T and Chichibu، نويسنده , , S and Nakamura، نويسنده , , S، نويسنده ,
Abstract :
A systematic study on the optical gain of continuous wave InGaN/GaN multiple quantum well laser diode wafers has been achieved by means of the variable excitation-stripe length (VEL) method. It will be demonstrated that mechanisms producing optical gain may vary according to the degree of fluctuation of InGaN composition in the lateral plane.
