Author/Authors :
Kawakami، نويسنده , , Yoichi and Narukawa، نويسنده , , Yukio and Sawada، نويسنده , , Ken and Saijyo، نويسنده , , Shin and Fujita، نويسنده , , Shizuo and Fujita، نويسنده , , Shigeo and Nakamura، نويسنده , , Shuji، نويسنده ,
Abstract :
The dynamic behavior of radiative recombination has been assessed in the InGaN-based purple, blue and green light emitting diodes (LEDs), as well as in purple laser diode (LD) components by means of time-resolved electroluminescence (TREL) and time-resolved photoluminescence (TRPL) spectroscopy. It was found that excitons localized at deep trap centers play an important role in the recombination process. Microstructural analysis suggests that these centers originate from the In-rich regions, acting as quantum dots which are self-formed within the wells. The radiative lifetime of localized excitons in the LD structure was almost constant at 6 ns in the temperature range between 20 and 200 K, indicating the zero-dimensional feature of excitons.
