Title of article
Radiation spectra in GaN-based LEDs under thermal-injection processes1
Author/Authors
Svechnikov، نويسنده , , S.V and Oleksenko، نويسنده , , P.Ph and Sukach، نويسنده , , G.A and Smertenko، نويسنده , , P.S and Vlaskina، نويسنده , , S.I and Gromashevski، نويسنده , , V.L، نويسنده ,
Pages
3
From page
319
To page
321
Abstract
The effects of series current magnitude (I) upon the intrinsic UV luminescence band (λ∼370 nm) and the impurity of the blue band (λ∼430 nm) of a GaN LED has been investigated. The excess device temperature (ΔTAR) of the GaN LED active region has been determined over a wide range of working currents. It has a linear behaviour for currents over 15 mA. The weaker dependence ΔTAR(i) at i<15 mA is due to the fact that at forward biases V<Eg/e all the power terminated to the device is released in the space charge region (w≤0.3 μm).
Keywords
Ultraviolet and light-blue radiation , DAP and band–band recombination , GaN LED
Journal title
Astroparticle Physics
Record number
2065311
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