Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

Light emitting diodes with an unconventional design were made on patterned GaAs (311)A-oriented substrates. A lateral p–n junction was formed in the GaAs–silicon doped epilayers grown by molecular beam epitaxy (MBE). Devices made with this p–n junction show good electroluminescence at room temperature. The lateral p–n junction would allow direct injection of electrons and holes in the active layer of devices such as laser diodes and could improve their characteristics.