Title of article
Gain characteristics of InP/InGaAs heterostructure avalanche photodiode
Author/Authors
Hyun، نويسنده , , Kyung Sook and Park، نويسنده , , Chanyong and Lee، نويسنده , , E.H، نويسنده ,
Pages
4
From page
106
To page
109
Abstract
The structural parameters of an avalanche photodiode, having a p-i-n structure of a multiplication region, have been analyzed by solving the electric field equations and avalanche gain factors. The multiplication layer width dependence of the breakdown voltage as well as the temperature dependent behavior of the breakdown voltage are explained consistently for devices.
Keywords
Charge plate , Avalanche photodiode , Avalanche gain , Multiplication layer width
Journal title
Astroparticle Physics
Record number
2065334
Link To Document