Title of article :
Gain characteristics of InP/InGaAs heterostructure avalanche photodiode
Author/Authors :
Hyun، نويسنده , , Kyung Sook and Park، نويسنده , , Chanyong and Lee، نويسنده , , E.H، نويسنده ,
Abstract :
The structural parameters of an avalanche photodiode, having a p-i-n structure of a multiplication region, have been analyzed by solving the electric field equations and avalanche gain factors. The multiplication layer width dependence of the breakdown voltage as well as the temperature dependent behavior of the breakdown voltage are explained consistently for devices.
Keywords :
Charge plate , Avalanche photodiode , Avalanche gain , Multiplication layer width
Journal title :
Astroparticle Physics
