Author/Authors :
In Lee ، نويسنده , , Joo and Gyoo Lee، نويسنده , , Hyung and Shin، نويسنده , , Eun-joo and Yu، نويسنده , , Sungkyu and Viswanath، نويسنده , , Kasi and Kim، نويسنده , , Dongho and Ihm، نويسنده , , Gukhyung، نويسنده ,
Abstract :
We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the emission peaks on the QDs with various modulation-doping concentrations, demonstrating that exchange interactions of electrons within single states have no effect on renormalization. Screening due to the electrons at modulation-doped layer as well as the photo-generated carriers in GaAs matrix plays an important role in reducing the radiative recombination rate.