Author/Authors :
Zhang، نويسنده , , B.P and Yasuda، نويسنده , , T and Wang، نويسنده , , W.X and Segawa، نويسنده , , Y and Edamatsu، نويسنده , , K and Itoh، نويسنده , , T and Yaguchi، نويسنده , , H and Onabe، نويسنده , , K، نويسنده ,
Abstract :
We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.
