Title of article :
Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga0.62In0.38As superlattices
Author/Authors :
Clérot، نويسنده , , F. and LʹHaridon، نويسنده , , H. and Le Corre، نويسنده , , A. and Godefroy، نويسنده , , A. Lintanf Salaün، نويسنده , , S. and Ponchet، نويسنده , , A.، نويسنده ,
Pages :
5
From page :
293
To page :
297
Abstract :
Optimization of the growth conditions of strained-layer superlattices for polarization-insensitive semiconductor optical amplifiers is reported. The quality of the structure is assessed by transmission electron microscopy studies. Polarized room temperature photoluminescence is shown to be a powerful tool to investigate the complex band structure of such structures. The comparison of experimental and simulated photoluminescence spectra reveals a very good agreement.
Keywords :
Strained superlattices , SOA , Photoluminescence
Journal title :
Astroparticle Physics
Record number :
2065477
Link To Document :
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