Dynamic annealing of damage in Ar+-implanted GaAs crystals

Rutherford-backscattering spectrometry, X-ray double-crystal diffractometry, reflection electron diffraction and Raman spectroscopy were used to study semi-insulating GaAs(100) crystals implanted with a high current density Ar+ ion beam. The crystal structure of the implanted layers is determined by the fluence and current density of the incident ion beam. Dynamic annealing of radiation defects takes place during implantation. This radiation defect annealing is of an ion-induced nature. Restoration of the implanted GaAs crystal structure is observed. The residual damage is localized in two regions at approximate depths of 60 and 110 nm. The results are discussed in terms of point defect interactions due to target heating during irradiation.