Title of article
Some annealing effects on r.f. sputtered Cu/Te/CdTe structure
Author/Authors
Debbagh، نويسنده , , F. and Ameziane، نويسنده , , E.L. and Azizan، نويسنده , , M. and Brunel، نويسنده , , M. and Nguyen، نويسنده , , T.T.A.، نويسنده ,
Pages
5
From page
223
To page
227
Abstract
Cu/Te/CdTe multilayers prepared entirely by r.f. sputtering on silicon substrates are investigated using grazing incidence X-ray diffraction (GIXD) and X-ray photoelectron spectroscopy (XPS) techniques. Migration of cadmium atoms from the CdTe layer to the free surface is observed when the films are annealed at 450 K. This migration is accompanied by the diffusion of copper and tellurium into the CdTe layer, leading to segregation of these two elements at the CdTe/Si interface.
Keywords
diffusion , Copper , Cadmium telluride r.f. sputtering
Journal title
Astroparticle Physics
Record number
2065574
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