Title of article
Causes of cracking of vacuum deposited thick amorphous silicon film
Author/Authors
Avrutin، نويسنده , , V.S. and Izumskaya، نويسنده , , N.F. and Hartman، نويسنده , , Y.M. and Andreeva، نويسنده , , A.V. and Vyatkin، نويسنده , , A.F. and Melnik، نويسنده , , N.N.، نويسنده ,
Pages
4
From page
21
To page
24
Abstract
Cracking of thick amorphous silicon films deposited in ultra high vacuum on crystalline substrates was investigated. It was found that microvoids occurring in amorphous films during deposition caused stresses in the films. The dependence of stresses in the amorphous film and in the substrate on film thickness were obtained. A method of preparation of thick (greater than 2 μm) non-cracked amorphous Si layers was proposed. It was revealed that during destruction of amorphous silicon film the partial structure relaxation of amorphous Si took place.
Keywords
Amorphous films , Silicon , cracking
Journal title
Astroparticle Physics
Record number
2065604
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