On the constitution of some Ga-M-P systems (where M represents Co, Rh, Ir, Ni or Pt)

Phase equilibria are established in the GaP-rich regions of five Ga-M-P systems (where M represents Co, Rh, Ir, Ni, or Pt) at 700 °C (or 600 °C for the Ni-bearing sample) using X-ray diffraction analysis. The results of the present study, in conjunction with previous work on the Ga-Pd-P system, give a complete picture of phase equilibria between GaP and the gallides and phosphides of the Co and Ni groups. Based on these data, it is concluded that many binary metal gallides, including CoGa3, CoGa, Rh2Ga9, RhGa9, Rh10Ga17, RhGa, Ir2Ga9, IrGa3, Ni2Ga3, PdGa, Pt3Ga7, PtGa2 and Pt2Ga3, may potentially serve as contact materials for use in high-temperature GaP-based electronic devices.