Title of article
Evaluation of quantum efficiency of porous silicon photoluminescence
Author/Authors
Skryshevsky، نويسنده , , V.A. and Laugier، نويسنده , , A. and Strikha، نويسنده , , V.I. and Vikulov، نويسنده , , V.A.، نويسنده ,
Pages
4
From page
54
To page
57
Abstract
The influence of photoluminescence of top porous silicon layer on deep p-n junction photocurrent is studied. The measurement of additional photocurrent caused by adsorption of porous silicon emission is shown to allow evaluation of the external quantum efficiency of photoluminescence. This can reach approximately 4% on n-Si upon illumination by the short wavelength tail of air mass (AM) 1.5 spectra.
Keywords
Photoluminescence , Porous silicon , solar cell
Journal title
Astroparticle Physics
Record number
2065721
Link To Document