Author/Authors :
Skryshevsky، نويسنده , , V.A. and Laugier، نويسنده , , A. and Strikha، نويسنده , , V.I. and Vikulov، نويسنده , , V.A.، نويسنده ,
Abstract :
The influence of photoluminescence of top porous silicon layer on deep p-n junction photocurrent is studied. The measurement of additional photocurrent caused by adsorption of porous silicon emission is shown to allow evaluation of the external quantum efficiency of photoluminescence. This can reach approximately 4% on n-Si upon illumination by the short wavelength tail of air mass (AM) 1.5 spectra.
