Formation of high-dielectric oxide films on SrVO3 − xSi substrates

In order to form electrodes in capacitor structures, metallic SrVO3 − x (SVO) films have been epitaxially grown on Si(100) substrates using a conventional electron-beam method. The resistivities of crystalline SVO films are from 340 to 900 μΩ cm. and their temperature dependences indicate metallic behaviors. such high-ɛ oxides as (Bax,Sr1 − x)TiO3 (BST) and Pb(Zr,Ti)O3 (PZT) films have been prepared by the solgel method on epitaxial-SVO/Si substrates. It is demonstrated that BST films can grow epitaxially on these substrates, while a PZT film shows no crystallinity. From the measurement by the secondary ion mass spectroscopy, it has been found that lead (Pb) and vanadium (V) elements mutually diffuse at the interface between a PZT and an SVO film. ectrical properties for Al/BST/SVO/Si capacitor structures have been investigated using I-V and C-V measurements. The best values of the breakdown field at a current density of 10−8 A cm−2 is 370 kV cm−1 and the effective dielectric constant is found to be as high as 410.