Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy

We report the electrical characteristics of GaInSb and GaInAsSb layers grown by metal organic vapor phase epitaxy (MOVPE) on GaSb and GaAs substrates versus the growth parameters as growth temperature and V/III ratio. The effect of initial growth process including GaSb or stepped buffers is also described. On bulk Ga0.6In0.4Sb layer grown with a stepped buffer layer, the best carrier density and mobility are 1.4 × 1016 cm−3 and 454 cm2 V−1 s−1, respectively. But the lower value (6.4 × 1015 cm−3) than the previous one was obtained on a p/n structure containing a stepped buffer layer and a growth interruption between p- and n-layers. For the quaternary layer, the best results were obtained for samples grown outside the miscibility gap and close to the lattice matching.