Interfacial reactions between Ti thin films and InP

Interfacial reactions that occur between Ti thin films and InP substrates during annealing from 250 to 550 °C have been studied. Initial interaction was detected at 325 °C, which resulted in the formation of metallic In and TiP. TiP formation was limited by kinetics at low temperatures and much of the P released during InP decomposition was lost to the atmosphere. The amount of TiP increased with increasing temperatures and TiP was the only Ti-P phase detected. No In-Ti compound formation was detected in any samples studied.