Short-wavelength phase-change optical data storage in In-Sb-Te alloy films

Physical properties of In-Sb-Te thin films prepared by D.C. magnetron sputtering method are studied. X-ray diffraction and differential scanning calorimetry (DSC) results indicate that the crystallization temperature and the activation energy of In47Sb14Te39 thin films are about 300°C and 2.9 eV, respectively. The crystallization compounds of In47Sb14Te39 thin films mainly consist of In3SbTe2 with small amounts of InTe and In2Te3. Optical recording test of the films clearly shows that larger reflectivity contrast can be obtained by lower power argon laser (514.5 nm) irradiation. These results demonstrate that the ternary composition film is a promising candidate for short-wavelength direct overwritable phase-change optical data storage.