Srnanek، نويسنده , , R and Novotny، نويسنده , , I and Hotovy، نويسنده , , I and Gomati، نويسنده , , M.El، نويسنده ,
Pages :
4
From page :
127
To page :
130
Abstract :
By using H3PO4/H2O2/H2O etchant bevels through GaAs based structures were prepared. The bevels had angles lower than 5×10−4 rad and good profile linearity. For the bevel surface observation optical interference microscopy was used.
Keywords :
Chemical bevelling , Optical interference microscopy , Gallium arsenide
