Range and thermal behaviour studies of Tm+, Er+ and Yb+ implanted into LiNbO3 and quartz crystal

Tm+, Er+ and Yb+ have been implanted into LiNbO3 and quartz crystal (SiO2) in the energy range 100–400 keV. The profile of implanted ions was measured by Rutherford backscattering of MeV He ions. The mean projected range and range straggling obtained were compared with TRIM code. The result shows that (1) The mean projected range and range straggling are in well agreement with TRIM prediction except for 100 keV for LiNbO3 (2) The mean projected range is in good agreement with TRIM prediction within 8%, but the experimental range straggling is higher than the calculated value by TRIM code for quartz crystal. After 800°C annealing for 30 min, it is found that there is no obvious diffusion for the case of 300 keV Er+, but for the case of 300 keV Yb+ the diffusion occurs and the diffusion coefficient D estimated is 2.77×10−15 cm2 s−1.