Thermoelectric properties of hot-pressed n-type Bi2Te2.85Se0.15 compounds doped with SbI3

The n-type 0.1 wt.% SbI3-doped Bi2Te2.85 compounds were fabricated by hot pressing in the temperature range 380–420°C under 200 MPa in Ar. The density of the compounds was increased to 99.2% of theoretical density. The grains were preferentially oriented through hot pressing. As the pressing temperature was increased, the density and degree of preferred orientation of grains were increased, thus giving rise to an increase in the figure of merit. The figure of merit hot pressed at 420°C was 2.35×10−3/K.