Title of article :
Physical investigations on electron-beam evaporated vanadium pentoxide films
Author/Authors :
Ramana، نويسنده , , C.V and Hussain، نويسنده , , O.M and Srinivasulu Naidu، نويسنده , , B and Julien، نويسنده , , C and Balkanski، نويسنده , , M، نويسنده ,
Pages :
8
From page :
32
To page :
39
Abstract :
Thin films of vanadium pentoxide were prepared by the electron-beam evaporation technique onto Corning 7059 glass and silicon substrates maintained at Ts=553 K by varying the oxygen partial pressure in the range 0.1–20 mPa. These films have been characterized by studying their chemical state, structure, optical and electrical properties. V2O5 films of thickness 0.6 μm prepared at an oxygen partial pressure of 20 mPa exhibit an orthorhombic layered structure with an optical band gap of 2.3 eV. The room temperature electrical conductivity of the films is 2×10−5 S cm−1 with an activation energy of 0.42 eV in the temperature range 303–523 K.
Keywords :
Vanadium pentoxide , Thin Film Growth , Electron-beam evaporation
Journal title :
Astroparticle Physics
Record number :
2066134
Link To Document :
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