Optical effects of α-SiCx:H films synthesized by reactive ion beam deposition

Hydrogenated amorphous silicon carbide (α-SiCx:H) films have been synthesized by reactive ion beam deposition (RIBD) in a single ion Kaufman source system. Pure methane (CH4) was utilized as reactive gas during deposition. Optical effects of α-SiCx:H films were studied by Infrared (IR) reflection spectra in the wavenumber range 500–3500 cm−1. Localized vibration modes and interference fringes were observed in the IR reflection spectra. By a detailed theoretical analysis and computer simulation of the IR reflection spectra, the refractive index of the films and the characteristics of the bonding between Si, C and H were obtained. The results show that the reflection spectra fitted with a suitable theoretical model are very useful for the analysis of the structures of α-SiCx:H films.