Title of article :
The C-type defect on Si(001) as a hydrogen-vacancy complex
Author/Authors :
Miyazaki، نويسنده , , Takehide and Uda، نويسنده , , Tsuyoshi and Terakura، نويسنده , , Kiyoyuki، نويسنده ,
Abstract :
An ab initio study is performed for atomic and electronic structures of the C-type defect on Si(001). A complex of a second-layer vacancy with a hydrogen atom is investigated as a structure model of this defect and its electronic structure is presented. Energetics of formation of the complex model are compared with that of its intrinsic counterpart.
Keywords :
surface , DEFECT , Hydrogen , Electronic structure , Silicon
Journal title :
Astroparticle Physics
