Author/Authors :
Ciorga، نويسنده , , M and Bryja، نويسنده , , L and Misiewicz، نويسنده , , J and Paszkiewicz، نويسنده , , R and Korbutowicz، نويسنده , , R and Panek، نويسنده , , M and Paszkiewicz، نويسنده , , B and T?acza?a، نويسنده , , M، نويسنده ,
Abstract :
The GaN layers were grown on sapphire substrates using atmospheric pressure MOCVD system. The new process scheme was developed to improve the quality of epitaxial layers. Additional buffer layers, grown with increasing temperature and increasing V/III ratio, were inserted between the low temperature buffer layer and the high temperature GaN overlayer grown on it. The influence of growth conditions on luminescence properties of GaN layers, especially the yellow emission, was investigated.
Keywords :
MOCVD growth technology , GaN compounds , yellow emission , Photoluminescence (PL)
