Title of article
MBE GaN grown on (101) NdGaO3 substrates
Author/Authors
V.V. Mamutin، نويسنده , , V.V. and Toropov، نويسنده , , A.A. and Kartenko، نويسنده , , N.F. and Ivanov، نويسنده , , S.V. and Wagner، نويسنده , , A. and Monemar، نويسنده , , B.، نويسنده ,
Pages
4
From page
56
To page
59
Abstract
We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO3) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity–voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher luminescence efficiency of the former.
Keywords
Molecular Beam Epitaxy , Gallium nitride , Scanning electron microscopy , X-ray diffraction , Photoluminescence , Nitrogen activator
Journal title
Astroparticle Physics
Record number
2066575
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