Author/Authors :
V.V. Mamutin، نويسنده , , V.V. and Toropov، نويسنده , , A.A. and Kartenko، نويسنده , , N.F. and Ivanov، نويسنده , , S.V. and Wagner، نويسنده , , A. and Monemar، نويسنده , , B.، نويسنده ,
Abstract :
We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO3) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity–voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher luminescence efficiency of the former.
Keywords :
Molecular Beam Epitaxy , Gallium nitride , Scanning electron microscopy , X-ray diffraction , Photoluminescence , Nitrogen activator
