High speed growth of device quality GaN and InGaN by RF-MBE

A high-speed growth (1.2–1.4 μm h−1) of device-quality GaN epitaxial layers was demonstrated by molecular beam epitaxy using RF radical nitrogen (RF-MBE). The migration enhanced epitaxy (MEE) growth of GaN was investigated. For undoped GaN, the room temperature (RT) PL-FWHM of 31 meV and the residual carrier density of 2.6×1016 cm−3 were obtained. The light emitting diode (LED) structures with InGaN/GaN MQW active layers were grown with a growth rate of 1.33 μm h−1. Green (567 nm) to blue (460 nm) range emissions were observed at RT under current injection.