Author/Authors :
Blant، نويسنده , , A.V and Cheng، نويسنده , , T.S and Jeffs، نويسنده , , N.J and Flannery، نويسنده , , L.B and Harrison، نويسنده , , I and Mosselmans، نويسنده , , J.F.W and Smith، نويسنده , , A.D and Foxon، نويسنده , , C.T، نويسنده ,
Abstract :
We have been studying the structural properties of Group III-nitrides by EXAFS. Previously we have investigated bulk Group III-nitrides and its alloys and have demonstrated that we can grow the full range of alloys from AlN to InN at low temperatures. Here we extend these investigations to study the local environment and lattice site occupied by dopant atoms in such samples.
Keywords :
Indium nitride , Molecular Beam Epitaxy , EXAFS , Mg doping , Semiconductors , Group III-nitrides
