Title of article
Fabrication and photoluminescence of GaN/sapphire submicron-scale structures with nanometre scale resolution
Author/Authors
Ribayrol، نويسنده , , A and Coquillat، نويسنده , , D and De La Rue، نويسنده , , R.M and Murad، نويسنده , , S.K and Wilkinson، نويسنده , , C.D.W and Girard، نويسنده , , P and Briot، نويسنده , , O and Aulombard، نويسنده , , R.L، نويسنده ,
Pages
5
From page
335
To page
339
Abstract
We report the fabrication of submicon-scale structures using high resolution etching to transfer patterns from PMMA into GaN with an intermediate mask consisting of a bilayer of titanium and SiNx. Atomic force microscopy measurements showed the high quality of the structures etched in CH4/H2 as well as an erosion of the mask. The low temperature photoluminescence measured on the etched structures was almost as strong as that from the unetched surface.
Keywords
Reactive Ion Etching , GaN , CH4/H2 , Microstructures , Photoluminescence , atomic force microscopy
Journal title
Astroparticle Physics
Record number
2066734
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