Title of article
Artificial neural network prediction of the band gap and melting point of binary and ternary compound semiconductors
Author/Authors
Zhaochun، نويسنده , , Zhang and Ruiwu، نويسنده , , Peng and Nianyi، نويسنده , , Chen، نويسنده ,
Pages
4
From page
149
To page
152
Abstract
In this paper, an artificial neural network trained by experimental data has been used to predict the values of the band gap and melting point of III–V, II–VI binary and I–III–VI2, II–IV–V2 ternary compound semiconductors. The calculated results were in good agreement with the experimental ones.
Keywords
III–V , II–VI , II–IV–V2 , Band gap , melting point , Artificial neural network , I–III–VI2
Journal title
Astroparticle Physics
Record number
2067121
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