Title of article
Heat transfer through source powder in sublimation growth of SiC crystal
Author/Authors
Kitanin، نويسنده , , E.L. and Ramm، نويسنده , , M.S. and Ris، نويسنده , , V.V. and Schmidt-Wellenburg، نويسنده , , A.A.، نويسنده ,
Pages
10
From page
174
To page
183
Abstract
A problem of heat transport in a source powder is very important for sublimation crystal growth technique. This paper is devoted to the development and implementation of a model of powder heat transfer. As an example temperature field calculation in a growth chamber containing a SiC-powder layer is performed.
Keywords
heat transfer , SiC-powder , Sublimation growth technique
Journal title
Astroparticle Physics
Record number
2067155
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