Thermal oxidation of cleft surface of InSe single crystal

The thermal oxidation processes of cleft surface of InSe single crystals in the temperature range from 200 to 615°C have been investigated. We used the cathodoluminescence and X-ray diffraction methods. We established that adsorption processes were activated and defect creation on the cleft InSe surface begun at the low temperatures. The formation of In2Se3 and In2(SeO4)3 phases took place at medium temperatures. In2O3 phase was formed at high temperatures. Results are in good agreement with the In–Se–O phase diagram that generally includes the In2(SeO4)3 phase formation.