Title of article
Defect origin and development in sublimation grown SiC boules
Author/Authors
Tuominen، نويسنده , , M. and Yakimova، نويسنده , , R. and Vehanen، نويسنده , , A. and Janzén، نويسنده , , E.، نويسنده ,
Pages
6
From page
228
To page
233
Abstract
SiC boules were grown by the modified Lely method. Macro-defects in the boules and wafers cut from them were studied by means of optical microscopy and chemical etching. The influence of the quality, the surface orientation and attachment of the seed crystal on secondary evaporation, domain and micropipe formation was studied. The results obtained are discussed in terms of defect development at different stages of the crystal growth and under different growth conditions.
Keywords
Silicon carbide crystals , sublimation growth , Optical microscopy , Macro-defect
Journal title
Astroparticle Physics
Record number
2067263
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