Effects of vicinal InP (001) surface on InAs dots grown by droplet hetero-epitaxy

We have systematically investigated the effects of InP substrate misorientation on the InAs dot formation by droplet hetero-epitaxy. The density and uniformity of the dots were investigated in the misorientation range between 0 and 4° from (001) toward [100]. Using 2°-off substrate, the density had the highest value of 2.2×1010 cm−2 and the uniformity was most improved, where average dot height and base diameter were 8.1 and 51 nm. Further, we found that the total volume of the dots increased with misorientation in spite of the other growth conditions remaining unchanged.