Effect of lattice match and Zn addition on the properties of Hg1−x(Cd1−yZny)xTe epilayers grown by isothermal vapor phase epitaxy

Isothermal vapor phase epitaxy (ISOVPE) growth of Hg1−xCdxTe (MCT) and Hg1−x(Cd1−yZny)xTe (MCZT) was carried out on the substrates of CdTe and nearly lattice matched Cd1−yZnyTe (y=0.045, CZT) to HgTe, respectively. The properties of MCZT/CZT epilayers with lattice mismatch and Zn addition were characterized and compared with those of MCT/CdTe epilayers. There is no obvious difference in electrical properties between MCT and MCZT epilayers. The hardness of MCZT is significantly greater than that of MCT. This is a good indication of the stability of the MCZT. Full width at half maximum (FWHM) of a four crystal X-ray rocking curves for the lattice matched MCZT/CZT is extremely smaller than that of the MCT/CdTe and the smallest FWHM value 36 arcsec, which is comparable to those reported by the other epitaxial methods.