Title of article
Inductively coupled plasma etching of CoFeB, CoZr, CoSm and FeMn thin films in interhalogen mixtures
Author/Authors
Cho، نويسنده , , H. and Jung، نويسنده , , K.B. and Hays، نويسنده , , D.C. and Hahn، نويسنده , , Y.B. and Feng، نويسنده , , T. and Park، نويسنده , , Y.D and Childress، نويسنده , , J.R. and Cadieu، نويسنده , , F.J. and Rani، نويسنده , , R. and Qian، نويسنده , , X.R. and Chen، نويسنده , , L. and Pearton، نويسنده , , S.J.، نويسنده ,
Pages
5
From page
107
To page
111
Abstract
Two new plasma chemistries (ICl and IBr) have been employed for patterning of CoFeB, CoZr, CoSm and FeMn thin films for application in magnetic memories. The interhalogen mixtures produced faster etch rates for FeMn, CoSm, and CoZr in both chemistries compared to Cl2 plasmas under the same conditions. The etch rates are a strong function of discharge composition, pressure, ion flux and ion energy. The data are consistent with an ion-assisted desorption mechanism for the metal chloride etch products. No effect on magnetic properties of etched CoSm was detectable under our conditions.
Keywords
plasma etching , Interhalogen mixtures , Magnetic memories , Magnetic properties
Journal title
Astroparticle Physics
Record number
2067338
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