Title of article
Dielectric properties of Al ∣ V2O5 ∣ Al thin film sandwich structures
Author/Authors
Venkata Ramana، نويسنده , , C and Hussain، نويسنده , , O.M and Srinivasulu Naidu، نويسنده , , B and Julien، نويسنده , , C، نويسنده ,
Pages
6
From page
173
To page
178
Abstract
Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Corning 7059 glass substrates kept at a temperature of Ts=423 K. The dielectric properties of Al ∣ V2O5 ∣ Al thin film sandwich structures were studied in the frequency range 0.1–100 kHz and in the temperature range 125–450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV.
Keywords
dielectric properties , Electron beam evaporation , V2O5 thin films
Journal title
Astroparticle Physics
Record number
2067368
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