Author/Authors :
Dmitri D. and Rastegaev، نويسنده , , V.P and Avrov، نويسنده , , D.D and Reshanov، نويسنده , , S.A and Lebedev، نويسنده , , A.O، نويسنده ,
Abstract :
The growth of silicon carbide crystals in vacuum by the LETI method gives 6H and 4H polytypes of n- and p-type conductivity. This is done by the appropriate selection of construction material, doping conditions and crystallography orientation of the growing surface.
