Author/Authors :
Rهback، نويسنده , , P and Yakimova، نويسنده , , R and Syvنjنrvi، نويسنده , , M and Nieminen، نويسنده , , R and Janzén، نويسنده , , E، نويسنده ,
Abstract :
An analytical model for the growth rate of one-dimensional sublimation process is presented. The model takes into account latent heat, diffusion through inert gas and absorption-desorption at the active surfaces. It is best applicable to growth at relatively high pressures and/or small source-to-seed distances.
Keywords :
silicon carbide , Crystal growth , Physical vapor transport , Mathematical Modeling
